SEOUL, Nov. 18 (Korea Bizwire) – Korean scientists found a new way to utilize black phosphorus to form the next-generation transistor with high stability and performance.
The Korea Institute of Science and Technology paved the way to use the newly found material for the high-performing transistor. (image: KIST)
The Korea Institute of Science and Technology announced on November 17 that its research team at the Interface Control Research Center led by professor Na Jun-hong paved the way to use the newly found material for the high-performing transistor.
Black phosphorus is an allotrope with the same element of phosphorus with a different form and characteristics. Like graphene, a well-known material for the next-generation transistor, it has layer-form but it has higher electron transfer performance. However, black phosphorus is hard to make a transistor as it has excessively high reaction rate in the air.
To reduce the current fluctuation in black phosphorus, the research team used aluminum oxide passivation and secured the stability. In the experiment, the team verified that the passivation also reduces low-frequency noise. Furthermore, the preservation of the passivated black phosphorus transistor in ambient air lasted for two months.
For the mass-production of black phosphorus transistors, a special technique is needed to complement to synthesize the black phosphorus materials uniformly. However, the study has a significant meaning that black phosphorus transistors can operate in a stable manner.
It is expected that black phosphorus transistors would be applied to the semiconductor industry such as transistors for display, microprocessors and memory chips. Professor Na said, “Thanks to the study, we could confirm that the controversial transistors made of black phosphorus can work stably in the ambient air.”
By John Choi (johnchoi@koreabizwire.com)
