A high bandwidth memory (HBM) product of SK hynx Inc. is displayed at an exhibition held in the southeastern city of Gyeongju on Oct. 28, 2025. (Yonhap)
SEOUL, Nov. 28 (Korea Bizwire) — SK hynix Inc. topped the global market for dynamic random-access memory (DRAM) in the July-September period, data showed Friday, maintaining its lead for three consecutive quarters.
SK hynix accounted for 34.1 percent of the global DRAM market in terms of sales in the third quarter, keeping the top spot despite a 5.3 percentage-point drop from the previous quarter, according to industry tracker Omdia.
During the period, Samsung Electronics’ share edged up 0.5 percentage point to 33.7 percent, narrowing its gap with SK hynix. U.S.-based Micron Technology Inc. accounted for 25.8 percent of the global market.
Global DRAM sales in the third quarter jumped 30 percent from the previous three-month period to US$40.3 billion amid rising prices, the researcher added.
SK hynix first surpassed Samsung Electronics in the DRAM sector in the first quarter of 2025.
(Yonhap)
