Korean Researchers Develop High-performance Transparent Electronic Memory Cell | Be Korea-savvy

Korean Researchers Develop High-performance Transparent Electronic Memory Cell


A team of Korean researchers have succeeded in developing a technology to manufacture transparent electronic memory cells that have the transmittance level above 80 percent of visible rays based on RGO. (image:hmomy/flickr)

A team of Korean researchers have succeeded in developing a technology to manufacture transparent electronic memory cells that have the transmittance level above 80 percent of visible rays based on RGO. (image:hmomy/flickr)

SEOUL, Korea, April 24, 2014 (Korea Bizwire) – A team of Korean researchers have succeeded in developing a technology to manufacture transparent electronic memory cells that have the transmittance level above 80 percent of visible rays based on reduced graphene oxide (RGO).

Kim Tae-geun, professor at Korea University, jointly with Kim Hee-Dong and other three authors, published an article titled “Transparent Multi-level Resistive Switching Phenomena Observed in ITO/RGO/ITO Memory Cells by the Sol-Gel Dip-Coating Method” on Scientific Reports, a sister publication of Nature, in its April 2014 issue.

The research was conducted with funding from the Ministry of Science, ICT, and Future Planning and the National Research Foundation.

According to the authors, there has been a wealth of studies on transparent memory devices using graphene oxide materials with excellent properties such as material flexibility and optical advantages.

Still, not many of the studies have touched on the topic of improving its reliability and realizing the multi-level properties. The research team has successfully realized a transparent electronic memory cell with multi-level resistive switching based on reduced graphene oxide without the complicated forming process.

The authors expect that the transparent electronic memory cell can be used in the future for applications requiring large amounts of information storage capacity such as the transparent laptop computer.

In the reliability test, the device exhibited a good endurance level of over 10-to-the-5th-power cycles and a long data retention rate of over 10,000 seconds at 85 degrees Celsius in each state.

Kim Tae-geun, the principal author, said, “The results of our study that used graphene that has been widely believed to be the next-generation semiconductor material are very promising. It is meaningful in that a Korean research team has preempted the technology for the transparent electronic memory cell essential for the future transparent electronic device industry.”

Written by Sean Chung (schung10@koreabizwire.com)

Technology (Follow us @Technews_Korea)

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